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Enhancement Mode MOSFET
Apollo offers a wide range of enhancement mode MOSFET products.
Category: N-Channel MOSFET
Apollo P/N
Cross
Vds
(V)
Vgs
(±V)
Id
(A)
Rds (on)
(at Vgs=10V) (mΩ)
Rds (on)
(at Vgs=4.5V) (mΩ)
Rds (on)
(at Vgs=2.5V) (mΩ)
Package
AP2300A


20105
2535
SOT23 (TO236)
AP2300B


20105
2535
SOT23-3
AP2302A

SI2302DS
2082.8
85115
SOT23 (TO236)
AP2302B


2082.8
85115
SOT23-3
AP2304A


SI2304DS
30202.5117190
SOT23 (TO236)
AP2304B



30202.5117190
SOT23-3
AP2306A


SI2306DS
30203.55794
SOT23 (TO236)
AP2306B



30203.55794
SOT23-3
AP2308A


SI2308DS
60202.0160220
SOT23 (TO236)
AP2308B



60202.0160220
SOT23-3
AP2310A


20106.5
2230
SOT23 (TO236)
AP2310B



20106.5
2230
SOT23-3
AP2366A


SI2366DS
30205.83642
SOT23 (TO236)
AP2366B



30205.83642
SOT23-3
AP3400A

30125.8283352SOT23 (TO236)
AP3400B


AO340030125.8283352SOT23-3
AP3402A


30124.05570110
SOT23 (TO236)
AP3402B


AO3402
30124.05570110
SOT23-3
AP3404A



30205.82843
SOT23 (TO236)
AP3404B


AO340430205.82843
SOT23-3
AP3406A



30203.65070
SOT23 (TO236)
AP3406B


AO3406
30203.65070
SOT23-3
AP3410A



30125.8283342
SOT23-6 (SOT163)
AP3410B



30125.8283342
SOT23-3
AP3414A



2084.2
5063
SOT23 (TO236)
AP3414B


AO3414
2084.2
5063
SOT23-3
AP8205T


Generic: 8205T
20124.3

46
SOT23-6 (SOT163)
APN2392

AON2392
1002083239
DFN 2x2C
APN6512
AON6512
30201501.72.4
DFN5x6-8 (PDFNWB5x6-8L)
APN6516


AON6516
30203258
DFN5x6-8 (PDFNWB5x6-8L)
Category: P-Channel MOSFET
Apollo P/N
Cross
Vds
(V)
Vgs
(±V)
Id
(A)
Rds (on)
(at Vgs=-10V) (mΩ)
Rds (on)
(at Vgs=-4.5V) (mΩ)
Rds (on)
(at Vgs=-2.5V) (mΩ)
Package
AP3401A

-3012-4.25065120SOT23 (TO236)
AP3401B


AO3401-3012-4.25065120SOT23-3
AP3403A



-3012-2.6115150200
SOT23 (TO236)
AP3403B


AO3403
-3012-2.6115150200
SOT23-3
AP3407A


-3020-4.15287
SOT23 (TO236)
AP3407B


AO3407
-3020-4.15287
SOT23-3
AP3409A



-3020-2.6130200
SOT23 (TO236)
AP3409B


AO3409
-3020
-2.6
130200
SOT23-3
AP3419A



-2012-3.57595145
SOT23 (TO236)
AP3419B


AO3419
-2012-3.57595145
SOT23-3
Power Management Chips

Apollo continues to enhance the power management chip portfolio.
Category: Power Management
Apollo P/N
Cross
Description
Package
DW01+


Generic: DW01+
Li-ion battery protection: DW01 + 8205
SOT23-6 (SOT163)
N-Channel MOSFET
AP2300A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 5A
RDS(ON) (at VGS = 4.5V) < 25mΩ
RDS(ON) (at VGS = 2.5V) < 35mΩ
RDS(ON) (at VGS = 1.8V) < 55mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.13
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N-Channel MOSFET
AP2300B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 5A
RDS(ON) (at VGS = 4.5V) < 25mΩ
RDS(ON) (at VGS = 2.5V) < 35mΩ
RDS(ON) (at VGS = 1.8V) < 55mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.13
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N-Channel MOSFET
AP2302A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.13
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N-Channel MOSFET
AP2302B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.13
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AP2304A (Data Sheet)
N-Channel MOSFET
AP2304A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP2304B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP2306A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 3.5A) < 57mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.8A) < 94mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP2306B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 3.5A) < 57mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.8A) < 94mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP2308A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 60V
RDS(ON) (at VGS = 10V, ID = 2.0A) < 160mΩ
RDS(ON) (at VGS = 4.5V, ID = 1.7A) < 220mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.20
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N-Channel MOSFET
AP2308B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 60V
RDS(ON) (at VGS = 10V, ID = 2.0A) < 160mΩ
RDS(ON) (at VGS = 4.5V, ID = 1.7A) < 220mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.20
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N-Channel MOSFET
AP2310A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
RDS(ON) (at VGS = 4.5V, ID = 6.5A) < 22mΩ
RDS(ON) (at VGS = 2.5V, ID = 5.5A) < 30mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP2310B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
RDS(ON) (at VGS = 4.5V, ID = 6.5A) < 22mΩ
RDS(ON) (at VGS = 2.5V, ID = 5.5A) < 30mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP2366A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V) < 36mΩ
RDS(ON) (at VGS = 4.5V) < 42mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.18
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N-Channel MOSFET
AP2366B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V) < 36mΩ
RDS(ON) (at VGS = 4.5V) < 42mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.18
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N-Channel MOSFET
AP3400A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP3400B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.15
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P-Channel MOSFET
AP3401A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = -30V
ID (at VGS = -10V) = -4.2A
RDS(ON) (at VGS = -10V) < 50mΩ
RDS(ON) (at VGS = -4.5V) < 65mΩ
RDS(ON) (at VGS = -2.5V) < 120mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.15
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P-Channel MOSFET
AP3401B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = -30V
ID (at VGS = -10V) = -4.2A
RDS(ON) (at VGS = -10V) < 50mΩ
RDS(ON) (at VGS = -4.5V) < 65mΩ
RDS(ON) (at VGS = -2.5V) < 120mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.15
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AP3402A
N-Channel MOSFET
AP3402A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.15
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AP3402B
N-Channel MOSFET
AP3402B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.15
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P-Channel MOSFET
AP3403A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = -30V
ID (at VGS = -10V) = -2.6A
RDS(ON) (at VGS = -10V) < 115mΩ
RDS(ON) (at VGS = -4.5V) < 150mΩ
RDS(ON) (at VGS = -2.5V) < 200mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.18
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P-Channel MOSFET
AP3403B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = -30V
ID (at VGS = -10V) = -2.6A
RDS(ON) (at VGS = -10V) < 115mΩ
RDS(ON) (at VGS = -4.5V) < 150mΩ
RDS(ON) (at VGS = -2.5V) < 200mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.18
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AP3404A
N-Channel MOSFET
AP3404A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.18
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AP3404B
N-Channel MOSFET
AP3404B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.18
Add
AP3406A
N-Channel MOSFET
AP3406A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 3.6A
RDS(ON) (at VGS = 10V) < 50mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.18
Add
AP3406B
N-Channel MOSFET
AP3406B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 3.6A
RDS(ON) (at VGS = 10V) < 50mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.18
Add
P-Channel MOSFET
AP3407A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
ID = -4.1A
RDS(ON) (at VGS = -10V) < 52mΩ
RDS(ON) (at VGS = -4.5V) < 87mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.15
Add
AP3407B (Data Sheet)
P-Channel MOSFET
AP3407B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
ID = -4.1A
RDS(ON) (at VGS = -10V) < 52mΩ
RDS(ON) (at VGS = -4.5V) < 87mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.15
Add
P-Channel MOSFET
AP3409A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
ID = -2.6A
RDS(ON) (at VGS = -10V) < 130mΩ
RDS(ON) (at VGS = -4.5V) < 200mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.15
Add
P-Channel MOSFET
AP3409B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
ID = -2.6A
RDS(ON) (at VGS = -10V) < 130mΩ
RDS(ON) (at VGS = -4.5V) < 200mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.15
Add
AP3410A
N-Channel MOSFET
AP3410A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 42mΩ
RDS(ON) (at VGS = 1.8V) < 72mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.18
Add
AP3410B
N-Channel MOSFET
AP3410B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 42mΩ
RDS(ON) (at VGS = 1.8V) < 72mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.18
Add
N-Channel MOSFET
AP3414A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 4.2A
RDS(ON) (at VGS = 4.5V) < 50mΩ
RDS(ON) (at VGS = 2.5V) < 63mΩ
RDS(ON) (at VGS = 1.8V) < 87mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.15
Add
N-Channel MOSFET
AP3414B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 4.2A
RDS(ON) (at VGS = 4.5V) < 50mΩ
RDS(ON) (at VGS = 2.5V) < 63mΩ
RDS(ON) (at VGS = 1.8V) < 87mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.15
Add
P-Channel MOSFET
AP3419A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -20V
ID = -3.5A
RDS(ON) (at VGS = -10V) < 75mΩ
RDS(ON) (at VGS = -4.5V) < 95mΩ
RDS(ON) (at VGS = -2.5V) < 145mΩ

• Package = SOT23 (TO236)
Quantity Discount available Quantity Discount available
$ 0.15
Add
P-Channel MOSFET
AP3419B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -20V
ID = -3.5A
RDS(ON) (at VGS = -10V) < 75mΩ
RDS(ON) (at VGS = -4.5V) < 95mΩ
RDS(ON) (at VGS = -2.5V) < 145mΩ

• Package = SOT23-3
Quantity Discount available Quantity Discount available
$ 0.15
Add
AP8205T
N-Channel MOSFET
AP8205T combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to Li-ion battery management applications.

• Product Summary
VDS = 20V
ID = 4.3A
RDS(ON) (at VGS = 4V) < 30mΩ
RDS(ON) (at VGS = 2.5V) < 46mΩ

• Package = SOT23-6 (SOT163)
Quantity Discount available Quantity Discount available
$ 0.15
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N-Channel MOSFET
APN2392 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 100V
ID (at VGS = 10V) = 8A
RDS(ON) (at VGS = 10V) < 32mΩ
RDS(ON) (at VGS = 4.5V) < 39mΩ

• Package = DFN 2x2C
Quantity Discount available Quantity Discount available
$ 0.50
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APN6512
N-Channel MOSFET
APN6512 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or DC/DC conversion applications.

• Product Summary
VDS = 30V
IDMAX (at VGS = 10V) = 150A
RDS(ON) (at VGS = 10V) < 1.7 mΩ
RDS(ON) (at VGS = 4.5V) < 2.4 mΩ

• Package = DFN5x6-8 (PDFNWB5x6-8L)
Quantity Discount available Quantity Discount available
$ 1.00
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APN6516
N-Channel MOSFET
APN6516 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or DC/DC conversion applications.

• Product Summary
VDS = 30V
IDMAX (at VGS = 10V) = 32A
RDS(ON) (at VGS = 10V) < 5 mΩ
RDS(ON) (at VGS = 4.5V) < 8 mΩ

• Package = DFN5x6-8 (PDFNWB5x6-8L)
Quantity Discount available Quantity Discount available
$ 0.50
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Power Management
The DW01+ battery protection IC is designed to protect single-cell lithium-ion/polymer battery from damage or degrading due to overcharge, overdischarge, and/or overcurrent.

• Product Summary
- Ultra-low quiescent current at 3μA (Vcc=3.9V)
- Ultra-low power-down current at 0.1μA (Vcc=2.0V).
- Precision overcharge protection voltage: 4.3V ± 50mV
- Load detection function during overcharge mode
- Two detection levels for overcurrent protection
- Delay times are generated by internal circuits. No external capacitor is required.

• Package = SOT23-6 (SOT163)
Quantity Discount available Quantity Discount available
$ 0.15
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