AP6601 (Data Sheet)
Complementary MOSFET
AP6601 combines advanced MOSFET technology with a low resistance package to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, which is suitable for a wide variety of applications.
• Product Summary
N-Channel
VDS = 30V
ID (at VGS = 10V) = 3.4A
RDS(ON) (at VGS = 10V) < 60mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 90mΩ
P-Channel
VDS = -30V
ID (at VGS = -10V) = -2.3A
RDS(ON) (at VGS = -10V) < 115mΩ
RDS(ON) (at VGS = -4.5V) < 150mΩ
RDS(ON) (at VGS = -2.5V) < 200mΩ
• Package = SOT23-6 (SOT163) / TSOP6
• Product Summary
N-Channel
VDS = 30V
ID (at VGS = 10V) = 3.4A
RDS(ON) (at VGS = 10V) < 60mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 90mΩ
P-Channel
VDS = -30V
ID (at VGS = -10V) = -2.3A
RDS(ON) (at VGS = -10V) < 115mΩ
RDS(ON) (at VGS = -4.5V) < 150mΩ
RDS(ON) (at VGS = -2.5V) < 200mΩ
• Package = SOT23-6 (SOT163) / TSOP6
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