Category: N-Channel MOSFET | ||||||||||
Apollo P/N | Cross | Vds (V) | Vgs (±V) | Id (A) | Rds (on) (at Vgs=10V) (mΩ) | Rds (on) (at Vgs=4.5V) (mΩ) | Rds (on) (at Vgs=2.5V) (mΩ) | Package | ||
| AP2300A |  |  | 20 | 10 | 5 | 25 | 35 | SOT23 (TO236) | ||
| AP2300B | | | 20 | 10 | 5 | 25 | 35 | SOT23-3 | ||
| AP2302A |  |  | SI2302DS | 20 | 8 | 2.8 | 85 | 115 | SOT23 (TO236) | |
| AP2302B | | | 20 | 8 | 2.8 | 85 | 115 | SOT23-3 | ||
AP2304A | | | SI2304DS | 30 | 20 | 2.5 | 117 | 190 | SOT23 (TO236) | |
AP2304B | | | 30 | 20 | 2.5 | 117 | 190 | SOT23-3 | ||
AP2306A | | | SI2306DS | 30 | 20 | 3.5 | 57 | 94 | SOT23 (TO236) | |
AP2306B | | | 30 | 20 | 3.5 | 57 | 94 | SOT23-3 | ||
AP2308A | | | SI2308DS | 60 | 20 | 2.0 | 160 | 220 | SOT23 (TO236) | |
AP2308B | | | 60 | 20 | 2.0 | 160 | 220 | SOT23-3 | ||
| AP3400A |  |  | 30 | 12 | 5.8 | 28 | 33 | 52 | SOT23 (TO236) | |
AP3400B | | | AO3400 | 30 | 12 | 5.8 | 28 | 33 | 52 | SOT23-3 |
| AP3402A | | | 30 | 12 | 4.0 | 55 | 70 | 110 | SOT23 (TO236) | |
AP3402B | | | AO3402 | 30 | 12 | 4.0 | 55 | 70 | 110 | SOT23-3 |
AP3404A | | | 30 | 20 | 5.8 | 28 | 43 | SOT23 (TO236) | ||
AP3404B | | | AO3404 | 30 | 20 | 5.8 | 28 | 43 | SOT23-3 | |
AP3406A | | | 30 | 20 | 3.6 | 50 | 70 | SOT23 (TO236) | ||
AP3406B | | | AO3406 | 30 | 20 | 3.6 | 50 | 70 | SOT23-3 | |
AP3410A | | | 30 | 12 | 5.8 | 28 | 33 | 42 | SOT23-6 (SOT163) | |
AP3410B | | | 30 | 12 | 5.8 | 28 | 33 | 42 | SOT23-3 | |
AP3414A |  |  | 20 | 8 | 4.2 | 50 | 63 | SOT23 (TO236) | ||
AP3414B | | | AO3414 | 20 | 8 | 4.2 | 50 | 63 | SOT23-3 | |
AP8205T | | | Generic: 8205T | 20 | 12 | 4.3 | 46 | SOT23-6 (SOT163) | ||
| APN2392 | | | AON2392 | 100 | 20 | 8 | 32 | 39 | DFN 2x2C | |
APN6512 | |  | AON6512 | 30 | 20 | 150 | 1.7 | 2.4 | DFN5x6-8 (PDFNWB5x6-8L) | |
APN6516 | | | AON6516 | 30 | 20 | 32 | 5 | 8 | DFN5x6-8 (PDFNWB5x6-8L) | |
N-Channel MOSFET
AP2300A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 5A
RDS(ON) (at VGS = 4.5V) < 25mΩ
RDS(ON) (at VGS = 2.5V) < 35mΩ
RDS(ON) (at VGS = 1.8V) < 55mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 5A
RDS(ON) (at VGS = 4.5V) < 25mΩ
RDS(ON) (at VGS = 2.5V) < 35mΩ
RDS(ON) (at VGS = 1.8V) < 55mΩ
• Package = SOT23 (TO236)
Quantity Discount available
$ 0.13
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N-Channel MOSFET
AP2300B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 5A
RDS(ON) (at VGS = 4.5V) < 25mΩ
RDS(ON) (at VGS = 2.5V) < 35mΩ
RDS(ON) (at VGS = 1.8V) < 55mΩ
• Package = SOT23-3
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 5A
RDS(ON) (at VGS = 4.5V) < 25mΩ
RDS(ON) (at VGS = 2.5V) < 35mΩ
RDS(ON) (at VGS = 1.8V) < 55mΩ
• Package = SOT23-3
Quantity Discount available
$ 0.13
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N-Channel MOSFET
AP2302A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ
• Package = SOT23 (TO236)
Quantity Discount available
$ 0.13
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N-Channel MOSFET
AP2302B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ
• Package = SOT23-3
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ
• Package = SOT23-3
Quantity Discount available
$ 0.13
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AP2304A (Data Sheet)
N-Channel MOSFET
AP2304A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ
• Package = SOT23 (TO236)
Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP2304B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ
• Package = SOT23-3
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ
• Package = SOT23-3
Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP2306A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 3.5A) < 57mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.8A) < 94mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 3.5A) < 57mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.8A) < 94mΩ
• Package = SOT23 (TO236)
Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP2306B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 3.5A) < 57mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.8A) < 94mΩ
• Package = SOT23-3
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 3.5A) < 57mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.8A) < 94mΩ
• Package = SOT23-3
Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP2308A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 60V
RDS(ON) (at VGS = 10V, ID = 2.0A) < 160mΩ
RDS(ON) (at VGS = 4.5V, ID = 1.7A) < 220mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 60V
RDS(ON) (at VGS = 10V, ID = 2.0A) < 160mΩ
RDS(ON) (at VGS = 4.5V, ID = 1.7A) < 220mΩ
• Package = SOT23 (TO236)
Quantity Discount available
$ 0.20
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N-Channel MOSFET
AP2308B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 60V
RDS(ON) (at VGS = 10V, ID = 2.0A) < 160mΩ
RDS(ON) (at VGS = 4.5V, ID = 1.7A) < 220mΩ
• Package = SOT23-3
• Product Summary
VDS (V) = 60V
RDS(ON) (at VGS = 10V, ID = 2.0A) < 160mΩ
RDS(ON) (at VGS = 4.5V, ID = 1.7A) < 220mΩ
• Package = SOT23-3
Quantity Discount available
$ 0.20
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N-Channel MOSFET
AP3400A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ
• Package = SOT23 (TO236)
Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP3400B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ
• Package = SOT23-3
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ
• Package = SOT23-3
Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP3402A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ
• Package = SOT23 (TO236)
Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP3402B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ
• Package = SOT23-3
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ
• Package = SOT23-3
Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP3404A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ
• Package = SOT23 (TO236)
Quantity Discount available
$ 0.18
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N-Channel MOSFET
AP3404B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ
• Package = SOT23-3
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ
• Package = SOT23-3
Quantity Discount available
$ 0.18
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N-Channel MOSFET
AP3406A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 3.6A
RDS(ON) (at VGS = 10V) < 50mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 3.6A
RDS(ON) (at VGS = 10V) < 50mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
• Package = SOT23 (TO236)
Quantity Discount available
$ 0.18
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N-Channel MOSFET
AP3406B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 3.6A
RDS(ON) (at VGS = 10V) < 50mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
• Package = SOT23-3
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 3.6A
RDS(ON) (at VGS = 10V) < 50mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
• Package = SOT23-3
Quantity Discount available
$ 0.18
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N-Channel MOSFET
AP3410A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 42mΩ
RDS(ON) (at VGS = 1.8V) < 72mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 42mΩ
RDS(ON) (at VGS = 1.8V) < 72mΩ
• Package = SOT23 (TO236)
Quantity Discount available
$ 0.18
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N-Channel MOSFET
AP3410B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 42mΩ
RDS(ON) (at VGS = 1.8V) < 72mΩ
• Package = SOT23-3
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 42mΩ
RDS(ON) (at VGS = 1.8V) < 72mΩ
• Package = SOT23-3
Quantity Discount available
$ 0.18
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N-Channel MOSFET
AP3414A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 4.2A
RDS(ON) (at VGS = 4.5V) < 50mΩ
RDS(ON) (at VGS = 2.5V) < 63mΩ
RDS(ON) (at VGS = 1.8V) < 87mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 4.2A
RDS(ON) (at VGS = 4.5V) < 50mΩ
RDS(ON) (at VGS = 2.5V) < 63mΩ
RDS(ON) (at VGS = 1.8V) < 87mΩ
• Package = SOT23 (TO236)
Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP3414B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 4.2A
RDS(ON) (at VGS = 4.5V) < 50mΩ
RDS(ON) (at VGS = 2.5V) < 63mΩ
RDS(ON) (at VGS = 1.8V) < 87mΩ
• Package = SOT23-3
• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 4.2A
RDS(ON) (at VGS = 4.5V) < 50mΩ
RDS(ON) (at VGS = 2.5V) < 63mΩ
RDS(ON) (at VGS = 1.8V) < 87mΩ
• Package = SOT23-3
Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP8205T combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to Li-ion battery management applications.
• Product Summary
VDS = 20V
ID = 4.3A
RDS(ON) (at VGS = 4V) < 30mΩ
RDS(ON) (at VGS = 2.5V) < 46mΩ
• Package = SOT23-6 (SOT163)
• Product Summary
VDS = 20V
ID = 4.3A
RDS(ON) (at VGS = 4V) < 30mΩ
RDS(ON) (at VGS = 2.5V) < 46mΩ
• Package = SOT23-6 (SOT163)
Quantity Discount available
$ 0.15
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N-Channel MOSFET
APN2392 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 100V
ID (at VGS = 10V) = 8A
RDS(ON) (at VGS = 10V) < 32mΩ
RDS(ON) (at VGS = 4.5V) < 39mΩ
• Package = DFN 2x2C
• Product Summary
VDS = 100V
ID (at VGS = 10V) = 8A
RDS(ON) (at VGS = 10V) < 32mΩ
RDS(ON) (at VGS = 4.5V) < 39mΩ
• Package = DFN 2x2C
Quantity Discount available
$ 0.50
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N-Channel MOSFET
APN6512 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or DC/DC conversion applications.
• Product Summary
VDS = 30V
IDMAX (at VGS = 10V) = 150A
RDS(ON) (at VGS = 10V) < 1.7 mΩ
RDS(ON) (at VGS = 4.5V) < 2.4 mΩ
• Package = DFN5x6-8 (PDFNWB5x6-8L)
• Product Summary
VDS = 30V
IDMAX (at VGS = 10V) = 150A
RDS(ON) (at VGS = 10V) < 1.7 mΩ
RDS(ON) (at VGS = 4.5V) < 2.4 mΩ
• Package = DFN5x6-8 (PDFNWB5x6-8L)
Quantity Discount available
$ 1.00
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N-Channel MOSFET
APN6516 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or DC/DC conversion applications.
• Product Summary
VDS = 30V
IDMAX (at VGS = 10V) = 32A
RDS(ON) (at VGS = 10V) < 5 mΩ
RDS(ON) (at VGS = 4.5V) < 8 mΩ
• Package = DFN5x6-8 (PDFNWB5x6-8L)
• Product Summary
VDS = 30V
IDMAX (at VGS = 10V) = 32A
RDS(ON) (at VGS = 10V) < 5 mΩ
RDS(ON) (at VGS = 4.5V) < 8 mΩ
• Package = DFN5x6-8 (PDFNWB5x6-8L)
Quantity Discount available
$ 0.50
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