2N7002 (Data Sheet)
N-Channel MOSFET
2N7002 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 60V
ID = 115mA
RDS(ON) (at VGS = 10V) < 750mΩ
RDS(ON) (at VGS = 5V) < 750mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 60V
ID = 115mA
RDS(ON) (at VGS = 10V) < 750mΩ
RDS(ON) (at VGS = 5V) < 750mΩ
• Package = SOT23 (TO236)

$ 0.06
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N-Channel MOSFET
AP2300A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 5A
RDS(ON) (at VGS = 4.5V) < 25mΩ
RDS(ON) (at VGS = 2.5V) < 35mΩ
RDS(ON) (at VGS = 1.8V) < 55mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 5A
RDS(ON) (at VGS = 4.5V) < 25mΩ
RDS(ON) (at VGS = 2.5V) < 35mΩ
RDS(ON) (at VGS = 1.8V) < 55mΩ
• Package = SOT23 (TO236)

$ 0.13
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N-Channel MOSFET
AP2300B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 5A
RDS(ON) (at VGS = 4.5V) < 25mΩ
RDS(ON) (at VGS = 2.5V) < 35mΩ
RDS(ON) (at VGS = 1.8V) < 55mΩ
• Package = SOT23-3
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 5A
RDS(ON) (at VGS = 4.5V) < 25mΩ
RDS(ON) (at VGS = 2.5V) < 35mΩ
RDS(ON) (at VGS = 1.8V) < 55mΩ
• Package = SOT23-3

$ 0.13
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N-Channel MOSFET
AP2302A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ
• Package = SOT23 (TO236)

$ 0.13
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N-Channel MOSFET
AP2302B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ
• Package = SOT23-3
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ
• Package = SOT23-3

$ 0.13
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N-Channel MOSFET
AP2304A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ
• Package = SOT23 (TO236)

$ 0.15
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N-Channel MOSFET
AP2304B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ
• Package = SOT23-3
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ
• Package = SOT23-3

$ 0.15
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N-Channel MOSFET
AP2306A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 3.5A) < 57mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.8A) < 94mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 3.5A) < 57mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.8A) < 94mΩ
• Package = SOT23 (TO236)

$ 0.15
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N-Channel MOSFET
AP2306B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 3.5A) < 57mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.8A) < 94mΩ
• Package = SOT23-3
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 3.5A) < 57mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.8A) < 94mΩ
• Package = SOT23-3

$ 0.15
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N-Channel MOSFET
AP2308A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 60V
RDS(ON) (at VGS = 10V, ID = 2.0A) < 160mΩ
RDS(ON) (at VGS = 4.5V, ID = 1.7A) < 220mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 60V
RDS(ON) (at VGS = 10V, ID = 2.0A) < 160mΩ
RDS(ON) (at VGS = 4.5V, ID = 1.7A) < 220mΩ
• Package = SOT23 (TO236)

$ 0.20
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N-Channel MOSFET
AP2308B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 60V
RDS(ON) (at VGS = 10V, ID = 2.0A) < 160mΩ
RDS(ON) (at VGS = 4.5V, ID = 1.7A) < 220mΩ
• Package = SOT23-3
• Product Summary
VDS (V) = 60V
RDS(ON) (at VGS = 10V, ID = 2.0A) < 160mΩ
RDS(ON) (at VGS = 4.5V, ID = 1.7A) < 220mΩ
• Package = SOT23-3

$ 0.20
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N-Channel MOSFET
AP2310A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 20V
RDS(ON) (at VGS = 4.5V, ID = 6.5A) < 22mΩ
RDS(ON) (at VGS = 2.5V, ID = 5.5A) < 30mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 20V
RDS(ON) (at VGS = 4.5V, ID = 6.5A) < 22mΩ
RDS(ON) (at VGS = 2.5V, ID = 5.5A) < 30mΩ
• Package = SOT23 (TO236)

$ 0.15
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N-Channel MOSFET
AP2310B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 20V
RDS(ON) (at VGS = 4.5V, ID = 6.5A) < 22mΩ
RDS(ON) (at VGS = 2.5V, ID = 5.5A) < 30mΩ
• Package = SOT23-3
• Product Summary
VDS (V) = 20V
RDS(ON) (at VGS = 4.5V, ID = 6.5A) < 22mΩ
RDS(ON) (at VGS = 2.5V, ID = 5.5A) < 30mΩ
• Package = SOT23-3

$ 0.15
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AP2366A (Data Sheet)
N-Channel MOSFET
AP2366A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V) < 36mΩ
RDS(ON) (at VGS = 4.5V) < 42mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V) < 36mΩ
RDS(ON) (at VGS = 4.5V) < 42mΩ
• Package = SOT23 (TO236)

$ 0.18
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AP2366B (Data Sheet)
N-Channel MOSFET
AP2366B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V) < 36mΩ
RDS(ON) (at VGS = 4.5V) < 42mΩ
• Package = SOT23-3
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V) < 36mΩ
RDS(ON) (at VGS = 4.5V) < 42mΩ
• Package = SOT23-3

$ 0.18
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N-Channel MOSFET
AP3400A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ
• Package = SOT23 (TO236)

$ 0.15
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N-Channel MOSFET
AP3400B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ
• Package = SOT23-3
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ
• Package = SOT23-3

$ 0.15
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N-Channel MOSFET
AP3402A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ
• Package = SOT23 (TO236)

$ 0.15
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N-Channel MOSFET
AP3402B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ
• Package = SOT23-3
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ
• Package = SOT23-3

$ 0.15
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N-Channel MOSFET
AP3404A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ
• Package = SOT23 (TO236)

$ 0.18
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N-Channel MOSFET
AP3404B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ
• Package = SOT23-3
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ
• Package = SOT23-3

$ 0.18
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N-Channel MOSFET
AP3406A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 3.6A
RDS(ON) (at VGS = 10V) < 50mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 3.6A
RDS(ON) (at VGS = 10V) < 50mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
• Package = SOT23 (TO236)

$ 0.18
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N-Channel MOSFET
AP3406B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 3.6A
RDS(ON) (at VGS = 10V) < 50mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
• Package = SOT23-3
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 3.6A
RDS(ON) (at VGS = 10V) < 50mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
• Package = SOT23-3

$ 0.18
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N-Channel MOSFET
AP3410A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 42mΩ
RDS(ON) (at VGS = 1.8V) < 72mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 42mΩ
RDS(ON) (at VGS = 1.8V) < 72mΩ
• Package = SOT23 (TO236)

$ 0.18
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N-Channel MOSFET
AP3410B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 42mΩ
RDS(ON) (at VGS = 1.8V) < 72mΩ
• Package = SOT23-3
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 42mΩ
RDS(ON) (at VGS = 1.8V) < 72mΩ
• Package = SOT23-3

$ 0.18
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N-Channel MOSFET
AP3414A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 4.2A
RDS(ON) (at VGS = 4.5V) < 50mΩ
RDS(ON) (at VGS = 2.5V) < 63mΩ
RDS(ON) (at VGS = 1.8V) < 87mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 4.2A
RDS(ON) (at VGS = 4.5V) < 50mΩ
RDS(ON) (at VGS = 2.5V) < 63mΩ
RDS(ON) (at VGS = 1.8V) < 87mΩ
• Package = SOT23 (TO236)

$ 0.15
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N-Channel MOSFET
AP3414B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 4.2A
RDS(ON) (at VGS = 4.5V) < 50mΩ
RDS(ON) (at VGS = 2.5V) < 63mΩ
RDS(ON) (at VGS = 1.8V) < 87mΩ
• Package = SOT23-3
• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 4.2A
RDS(ON) (at VGS = 4.5V) < 50mΩ
RDS(ON) (at VGS = 2.5V) < 63mΩ
RDS(ON) (at VGS = 1.8V) < 87mΩ
• Package = SOT23-3

$ 0.15
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N-Channel MOSFET
AP8205T combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to Li-ion battery management applications.
• Product Summary
VDS = 20V
ID = 4.3A
RDS(ON) (at VGS = 4V) < 30mΩ
RDS(ON) (at VGS = 2.5V) < 46mΩ
• Package = SOT23-6 (SOT163)
• Product Summary
VDS = 20V
ID = 4.3A
RDS(ON) (at VGS = 4V) < 30mΩ
RDS(ON) (at VGS = 2.5V) < 46mΩ
• Package = SOT23-6 (SOT163)

$ 0.15
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N-Channel MOSFET
APN2392 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 100V
ID (at VGS = 10V) = 8A
RDS(ON) (at VGS = 10V) < 32mΩ
RDS(ON) (at VGS = 4.5V) < 39mΩ
• Package = DFN 2x2C
• Product Summary
VDS = 100V
ID (at VGS = 10V) = 8A
RDS(ON) (at VGS = 10V) < 32mΩ
RDS(ON) (at VGS = 4.5V) < 39mΩ
• Package = DFN 2x2C

$ 0.50
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N-Channel MOSFET
APN6512 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or DC/DC conversion applications.
• Product Summary
VDS = 30V
IDMAX (at VGS = 10V) = 150A
RDS(ON) (at VGS = 10V) < 1.7 mΩ
RDS(ON) (at VGS = 4.5V) < 2.4 mΩ
• Package = DFN5x6-8 (PDFNWB5x6-8L)
• Product Summary
VDS = 30V
IDMAX (at VGS = 10V) = 150A
RDS(ON) (at VGS = 10V) < 1.7 mΩ
RDS(ON) (at VGS = 4.5V) < 2.4 mΩ
• Package = DFN5x6-8 (PDFNWB5x6-8L)

$ 1.00
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N-Channel MOSFET
APN6516 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or DC/DC conversion applications.
• Product Summary
VDS = 30V
IDMAX (at VGS = 10V) = 32A
RDS(ON) (at VGS = 10V) < 5 mΩ
RDS(ON) (at VGS = 4.5V) < 8 mΩ
• Package = DFN5x6-8 (PDFNWB5x6-8L)
• Product Summary
VDS = 30V
IDMAX (at VGS = 10V) = 32A
RDS(ON) (at VGS = 10V) < 5 mΩ
RDS(ON) (at VGS = 4.5V) < 8 mΩ
• Package = DFN5x6-8 (PDFNWB5x6-8L)

$ 0.50
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