N-Channel MOSFET - Apollo Semiconductor Limited

Category: N-Channel MOSFET
Apollo P/N	Cross	Vds (V)	Vgs (±V)	Id (A)	Rds (on) (at Vgs=10V) (mΩ)	Rds (on) (at Vgs=4.5V) (mΩ)	Rds (on) (at Vgs=2.5V) (mΩ)	Package
2N7002	2N7002	60		0.115	7500			SOT23 (TO236)
AP2300A		20	10	5		25	35	SOT23 (TO236)
AP2300B		20	10	5		25	35	SOT23-3
AP2302A	SI2302DS	20	8	2.8		85	115	SOT23 (TO236)
AP2302B		20	8	2.8		85	115	SOT23-3
AP2304A	SI2304DS	30	20	2.5	117	190		SOT23 (TO236)
AP2304B		30	20	2.5	117	190		SOT23-3
AP2306A	SI2306DS	30	20	3.5	57	94		SOT23 (TO236)
AP2306B		30	20	3.5	57	94		SOT23-3
AP2308A	SI2308DS	60	20	2.0	160	220		SOT23 (TO236)
AP2308B		60	20	2.0	160	220		SOT23-3
AP2310A		20	10	6.5		22	30	SOT23 (TO236)
AP2310B		20	10	6.5		22	30	SOT23-3
AP2366A	SI2366DS	30	20	5.8	36	42		SOT23 (TO236)
AP2366B		30	20	5.8	36	42		SOT23-3
AP3400A		30	12	5.8	28	33	52	SOT23 (TO236)
AP3400B	AO3400	30	12	5.8	28	33	52	SOT23-3
AP3402A		30	12	4.0	55	70	110	SOT23 (TO236)
AP3402B	AO3402	30	12	4.0	55	70	110	SOT23-3
AP3404A		30	20	5.8	28	43		SOT23 (TO236)
AP3404B	AO3404	30	20	5.8	28	43		SOT23-3
AP3406A		30	20	3.6	50	70		SOT23 (TO236)
AP3406B	AO3406	30	20	3.6	50	70		SOT23-3
AP3410A		30	12	5.8	28	33	42	SOT23-6 (SOT163)
AP3410B		30	12	5.8	28	33	42	SOT23-3
AP3414A		20	8	4.2		50	63	SOT23 (TO236)
AP3414B	AO3414	20	8	4.2		50	63	SOT23-3
AP8205T	Generic: 8205T	20	12	4.3			46	SOT23-6 (SOT163)
APN2392	AON2392	100	20	8	32	39		DFN 2x2C
APN6512	AON6512	30	20	150	1.7	2.4		DFN5x6-8 (PDFNWB5x6-8L)
APN6516	AON6516	30	20	32	5	8		DFN5x6-8 (PDFNWB5x6-8L)

2N7002 (Data Sheet)

N-Channel MOSFET

2N7002 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 60V
ID = 115mA
RDS(ON) (at VGS = 10V) < 750mΩ
RDS(ON) (at VGS = 5V) < 750mΩ

• Package = SOT23 (TO236)

$ 0.06

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AP2300A (Data Sheet)

N-Channel MOSFET

AP2300A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 5A
RDS(ON) (at VGS = 4.5V) < 25mΩ
RDS(ON) (at VGS = 2.5V) < 35mΩ
RDS(ON) (at VGS = 1.8V) < 55mΩ

• Package = SOT23 (TO236)

$ 0.13

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AP2300B (Data Sheet)

N-Channel MOSFET

AP2300B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 5A
RDS(ON) (at VGS = 4.5V) < 25mΩ
RDS(ON) (at VGS = 2.5V) < 35mΩ
RDS(ON) (at VGS = 1.8V) < 55mΩ

• Package = SOT23-3

$ 0.13

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AP2302A (Data Sheet)

N-Channel MOSFET

AP2302A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ

• Package = SOT23 (TO236)

$ 0.13

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AP2302B (Data Sheet)

N-Channel MOSFET

AP2302B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ

• Package = SOT23-3

$ 0.13

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AP2304A (Data Sheet)

N-Channel MOSFET

AP2304A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ

• Package = SOT23 (TO236)

$ 0.15

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AP2304B (Data Sheet)

N-Channel MOSFET

AP2304B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ

• Package = SOT23-3

$ 0.15

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AP2306A (Data Sheet)

N-Channel MOSFET

AP2306A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 3.5A) < 57mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.8A) < 94mΩ

• Package = SOT23 (TO236)

$ 0.15

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AP2306B (Data Sheet)

N-Channel MOSFET

AP2306B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 3.5A) < 57mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.8A) < 94mΩ

• Package = SOT23-3

$ 0.15

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AP2308A (Data Sheet)

N-Channel MOSFET

AP2308A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 60V
RDS(ON) (at VGS = 10V, ID = 2.0A) < 160mΩ
RDS(ON) (at VGS = 4.5V, ID = 1.7A) < 220mΩ

• Package = SOT23 (TO236)

$ 0.20

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AP2308B (Data Sheet)

N-Channel MOSFET

AP2308B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 60V
RDS(ON) (at VGS = 10V, ID = 2.0A) < 160mΩ
RDS(ON) (at VGS = 4.5V, ID = 1.7A) < 220mΩ

• Package = SOT23-3

$ 0.20

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AP2310A (Data Sheet)

N-Channel MOSFET

AP2310A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
RDS(ON) (at VGS = 4.5V, ID = 6.5A) < 22mΩ
RDS(ON) (at VGS = 2.5V, ID = 5.5A) < 30mΩ

• Package = SOT23 (TO236)

$ 0.15

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AP2310B (Data Sheet)

N-Channel MOSFET

AP2310B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
RDS(ON) (at VGS = 4.5V, ID = 6.5A) < 22mΩ
RDS(ON) (at VGS = 2.5V, ID = 5.5A) < 30mΩ

• Package = SOT23-3

$ 0.15

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AP2366A (Data Sheet)

N-Channel MOSFET

AP2366A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V) < 36mΩ
RDS(ON) (at VGS = 4.5V) < 42mΩ

• Package = SOT23 (TO236)

$ 0.18

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AP2366B (Data Sheet)

N-Channel MOSFET

AP2366B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V) < 36mΩ
RDS(ON) (at VGS = 4.5V) < 42mΩ

• Package = SOT23-3

$ 0.18

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AP3400A (Data Sheet)

N-Channel MOSFET

AP3400A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ

• Package = SOT23 (TO236)

$ 0.15

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AP3400B (Data Sheet)

N-Channel MOSFET

AP3400B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ

• Package = SOT23-3

$ 0.15

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AP3402A

N-Channel MOSFET

AP3402A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ

• Package = SOT23 (TO236)

$ 0.15

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AP3402B

N-Channel MOSFET

AP3402B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ

• Package = SOT23-3

$ 0.15

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AP3404A

N-Channel MOSFET

AP3404A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ

• Package = SOT23 (TO236)

$ 0.18

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AP3404B

N-Channel MOSFET

AP3404B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ

• Package = SOT23-3

$ 0.18

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AP3406A

N-Channel MOSFET

AP3406A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 3.6A
RDS(ON) (at VGS = 10V) < 50mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ

• Package = SOT23 (TO236)

$ 0.18

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AP3406B

N-Channel MOSFET

AP3406B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 3.6A
RDS(ON) (at VGS = 10V) < 50mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ

• Package = SOT23-3

$ 0.18

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AP3410A

N-Channel MOSFET

AP3410A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 42mΩ
RDS(ON) (at VGS = 1.8V) < 72mΩ

• Package = SOT23 (TO236)

$ 0.18

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AP3410B

N-Channel MOSFET

AP3410B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 42mΩ
RDS(ON) (at VGS = 1.8V) < 72mΩ

• Package = SOT23-3

$ 0.18

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AP3414A (Data Sheet)

N-Channel MOSFET

AP3414A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 4.2A
RDS(ON) (at VGS = 4.5V) < 50mΩ
RDS(ON) (at VGS = 2.5V) < 63mΩ
RDS(ON) (at VGS = 1.8V) < 87mΩ

• Package = SOT23 (TO236)

$ 0.15

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AP3414B (Data Sheet)

N-Channel MOSFET

AP3414B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 4.2A
RDS(ON) (at VGS = 4.5V) < 50mΩ
RDS(ON) (at VGS = 2.5V) < 63mΩ
RDS(ON) (at VGS = 1.8V) < 87mΩ

• Package = SOT23-3

$ 0.15

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AP8205T

N-Channel MOSFET

AP8205T combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to Li-ion battery management applications.

• Product Summary
VDS = 20V
ID = 4.3A
RDS(ON) (at VGS = 4V) < 30mΩ
RDS(ON) (at VGS = 2.5V) < 46mΩ

• Package = SOT23-6 (SOT163)

$ 0.15

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APN2392

N-Channel MOSFET

APN2392 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 100V
ID (at VGS = 10V) = 8A
RDS(ON) (at VGS = 10V) < 32mΩ
RDS(ON) (at VGS = 4.5V) < 39mΩ

• Package = DFN 2x2C

$ 0.50

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APN6512

N-Channel MOSFET

APN6512 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or DC/DC conversion applications.

• Product Summary
VDS = 30V
IDMAX (at VGS = 10V) = 150A
RDS(ON) (at VGS = 10V) < 1.7 mΩ
RDS(ON) (at VGS = 4.5V) < 2.4 mΩ

• Package = DFN5x6-8 (PDFNWB5x6-8L)

$ 1.00

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APN6516

N-Channel MOSFET

APN6516 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or DC/DC conversion applications.

• Product Summary
VDS = 30V
IDMAX (at VGS = 10V) = 32A
RDS(ON) (at VGS = 10V) < 5 mΩ
RDS(ON) (at VGS = 4.5V) < 8 mΩ

• Package = DFN5x6-8 (PDFNWB5x6-8L)

$ 0.50

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