Apollo Semiconductor is an innovative supplier of MOSFET and power management chips in telecommunication, consumer electronics, industrial and PC applications. Through technological innovations, we provide our customers with the most advanced products, applications and solutions. Apollo Semiconductor puts the customers first. Our professional sales teams and distribution partners are committed to customer service excellence. |
Best Selling Products
N-Channel MOSFET
AP2302A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ
• Package = SOT23 (TO236)
Quantity Discount available
$ 0.13
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P-Channel MOSFET
AP2301A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = -20V
ID (at VGS = -4.5V) = -2.2A
RDS(ON) (at VGS = -4.5V) < 100mΩ
RDS(ON) (at VGS = -2.5V) < 150mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS = -20V
ID (at VGS = -4.5V) = -2.2A
RDS(ON) (at VGS = -4.5V) < 100mΩ
RDS(ON) (at VGS = -2.5V) < 150mΩ
• Package = SOT23 (TO236)
Quantity Discount available
$ 0.13
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N-Channel MOSFET
AP2304A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ
• Package = SOT23 (TO236)
• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ
• Package = SOT23 (TO236)
Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP3402B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ
• Package = SOT23-3
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ
• Package = SOT23-3
Quantity Discount available
$ 0.15
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P-Channel MOSFET
AP3401B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = -30V
ID (at VGS = -10V) = -4.2A
RDS(ON) (at VGS = -10V) < 50mΩ
RDS(ON) (at VGS = -4.5V) < 65mΩ
RDS(ON) (at VGS = -2.5V) < 120mΩ
• Package = SOT23-3
• Product Summary
VDS = -30V
ID (at VGS = -10V) = -4.2A
RDS(ON) (at VGS = -10V) < 50mΩ
RDS(ON) (at VGS = -4.5V) < 65mΩ
RDS(ON) (at VGS = -2.5V) < 120mΩ
• Package = SOT23-3
Quantity Discount available
$ 0.15
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N-Channel MOSFET
AP3404B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ
• Package = SOT23-3
• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ
• Package = SOT23-3
Quantity Discount available
$ 0.18
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New Products
Power Management
The DW01+ battery protection IC is designed to protect single-cell lithium-ion/polymer battery from damage or degrading due to overcharge, overdischarge, and/or overcurrent.
• Product Summary
- Ultra-low quiescent current at 3μA (Vcc=3.9V)
- Ultra-low power-down current at 0.1μA (Vcc=2.0V).
- Precision overcharge protection voltage: 4.3V ± 50mV
- Load detection function during overcharge mode
- Two detection levels for overcurrent protection
- Delay times are generated by internal circuits. No external capacitor is required.
• Package = SOT23-6 (SOT163)
• Product Summary
- Ultra-low quiescent current at 3μA (Vcc=3.9V)
- Ultra-low power-down current at 0.1μA (Vcc=2.0V).
- Precision overcharge protection voltage: 4.3V ± 50mV
- Load detection function during overcharge mode
- Two detection levels for overcurrent protection
- Delay times are generated by internal circuits. No external capacitor is required.
• Package = SOT23-6 (SOT163)
Quantity Discount available
$ 0.15
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AP8205T (Data Sheet)
N-Channel MOSFET
AP8205T combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to Li-ion battery management applications.
• Product Summary
VDS = 20V
ID = 4.3A
RDS(ON) (at VGS = 4V) < 30mΩ
RDS(ON) (at VGS = 2.5V) < 46mΩ
• Package = SOT23-6 (SOT163)
• Product Summary
VDS = 20V
ID = 4.3A
RDS(ON) (at VGS = 4V) < 30mΩ
RDS(ON) (at VGS = 2.5V) < 46mΩ
• Package = SOT23-6 (SOT163)
Quantity Discount available
$ 0.15
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AP6601 (Data Sheet)
Complementary MOSFET
AP6601 combines advanced MOSFET technology with a low resistance package to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, which is suitable for a wide variety of applications.
• Product Summary
N-Channel
VDS = 30V
ID (at VGS = 10V) = 3.4A
RDS(ON) (at VGS = 10V) < 60mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 90mΩ
P-Channel
VDS = -30V
ID (at VGS = -10V) = -2.3A
RDS(ON) (at VGS = -10V) < 115mΩ
RDS(ON) (at VGS = -4.5V) < 150mΩ
RDS(ON) (at VGS = -2.5V) < 200mΩ
• Package = SOT23-6 (SOT163) / TSOP6
• Product Summary
N-Channel
VDS = 30V
ID (at VGS = 10V) = 3.4A
RDS(ON) (at VGS = 10V) < 60mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 90mΩ
P-Channel
VDS = -30V
ID (at VGS = -10V) = -2.3A
RDS(ON) (at VGS = -10V) < 115mΩ
RDS(ON) (at VGS = -4.5V) < 150mΩ
RDS(ON) (at VGS = -2.5V) < 200mΩ
• Package = SOT23-6 (SOT163) / TSOP6
Quantity Discount available
$ 0.20
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