Complementary MOSFET - Apollo Semiconductor Limited

Apollo Semiconductor
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Category: Complementary MOSFET
Apollo P/N
Cross
MOSFET Type
Vds
(±V)
Vgs
(±V)
Id
(A)
Rds (on)
(Vgs=±10V) (mΩ)
Rds (on)
(Vgs=±4.5V) (mΩ)
Rds (on)
(Vgs=±2.5V) (mΩ)
Package
AP6601

AO6601
N-Channel

P-Channel
30

-30
12
3.4

-2.3
60

115
70

150
90

200
SOT23-6 (SOT163) / TSOP6
AP6604


AO6604
N-Channel

P-Channel
20

-20
8
3.4

-2.5

65

75
75

95
SOT23-6 (SOT163) / TSOP6
Complementary MOSFET
AP6601 combines advanced MOSFET technology with a low resistance package to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, which is suitable for a wide variety of applications.


• Product Summary

N-Channel
VDS = 30V
ID (at VGS = 10V) = 3.4A
RDS(ON) (at VGS = 10V) < 60mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 90mΩ

P-Channel
VDS = -30V
ID (at VGS = -10V) = -2.3A
RDS(ON) (at VGS = -10V) < 115mΩ
RDS(ON) (at VGS = -4.5V) < 150mΩ
RDS(ON) (at VGS = -2.5V) < 200mΩ


• Package = SOT23-6 (SOT163) / TSOP6
Quantity Discount available Quantity Discount available
$ 0.20
Add
Complementary MOSFET
AP6604 combines advanced MOSFET technology with a low resistance package to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, which is suitable for a wide variety of applications.


• Product Summary

N-Channel
VDS=20V
ID (at VGS = 4.5V)=3.4A
RDS(ON) (at VGS = 4.5V) < 65mΩ
RDS(ON) (at VGS = 2.5V) < 75mΩ
RDS(ON) (at VGS = 1.8V) < 100mΩ

P-Channel
VDS=-20V
ID (at VGS = -4.5V)=-2.5A
RDS(ON) (at VGS = -4.5V) < 75mΩ
RDS(ON) (at VGS = -2.5V) < 95mΩ
RDS(ON) (at VGS = -1.8V) < 115mΩ


• Package = SOT23-6 (SOT163) / TSOP6
Quantity Discount available Quantity Discount available
$ 0.20
Add
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